Two-dimensional transport-induced linear magneto-resistance in topological insulator Bi2Se3 nanoribbons.
نویسندگان
چکیده
We report the study of a novel linear magneto-resistance (MR) under perpendicular magnetic fields in Bi(2)Se(3) nanoribbons. Through angular dependence magneto-transport experiments, we show that this linear MR is purely due to two-dimensional (2D) transport, in agreement with the recently discovered linear MR from 2D topological surface state in bulk Bi(2)Te(3), and the linear MR of other gapless semiconductors and graphene. We further show that the linear MR of Bi(2)Se(3) nanoribbons persists to room temperature, underscoring the potential of exploiting topological insulator nanomaterials for room-temperature magneto-electronic applications.
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ورودعنوان ژورنال:
- ACS nano
دوره 5 9 شماره
صفحات -
تاریخ انتشار 2011